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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N80 VDSS = 800 V ID25 = 3.6 A RDS(on) = 3.6 W trr 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C I S IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 800 800 20 30 3.6 14.4 3.6 10 400 5 100 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W C C C C TO-220 (IXFP) D (TAB) G DS TO-263 (IXFA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 Features l l l 1.13/10 Nm/lb.in. 4 2 g g International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2.5 4.5 100 TJ = 25C TJ = 125C 50 1 3.6 V V nA mA mA W Advantages l l l Easy to mount Space savings High power density VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 1 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 % (c) 2000 IXYS All rights reserved 98746 (09/00) IXFA 3N80 IXFP 3N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 3.4 685 VGS = 0 V, VDS = 25 V, f = 1 MHz 73 16 12 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 12 W (External), 11 25 14 24 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 6 9 1.25 (TO-220) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side TO-220 (IXFP) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.6 14.4 1.5 250 A A V ns mC A 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Repetitive; pulse width limited by TJM I F = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % TO-263 (IXFA) Outline IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.52 1.8 Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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